Datasheet > FGB3236-F085C

FGB3236-F085C

更新时间： 2024-09-21 11:12:59

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	514K
描述
IGBT, 360V, 27A, 1.32V, 320mJ, EcoSPARK®, N-Channel Ignition

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中文翻译

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数据手册

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FGB3236-F085C 数据手册

DATA SHEET

www.onsemi.com

EcoSPARK^ꢀIgnition IGBT

20 mJ, 360 V, N−Channel Ignition IGBT

FGB3236-F085,

FGI3236-F085

D PAK−3

I2PAK (TO−262 3 LD)

CASE 418AJ

CASE 418AV

Features

• Industry Standard D PAK Package

MARKING DIAGRAM

• SCIS Energy = 330 mJ at T = 25°C

1 Gate

2 Collector

3 Emitter

• Logic Level Gate Drive

AYWW

XXX

XXXXXG

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

4 Collector

Applications

XXXX

= Assembly Location

= Year

= Work Week

= Device Code

= Pb−Free Package

• Automotive Ignition Coil Driver Circuits

• Coil On Plug Applications

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Collector (Flange)

Symbol

Parameter

Value

Units

Collector to Emitter Breakdown Voltage

360

CER

(I = 1 mA)

$Y&Z&3&K

FGI

3236

Emitter to Collector Voltage − Reverse

320

160

ECS

Battery Condition (I = 10 mA)

Self Clamping Inductive Switching Energy

SCIS25

SCIS

= 14.7 A, L = 3.0 mHy, T = 25°C)

Gate

Emitter

= onsemi Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

Self Clamping Inductive Switching Energy

(I = 10.4 A, L = 3.0 mHy, T = 150°C)

SCIS150

SCIS

Collector Current Continuous

at V = 4.0 V, T = 25°C

C25

Collector Current Continuous

at V = 4.0 V, T = 110°C

C110

FGI3236 = Specific Device Code

Gate to Emitter Voltage Continuous

187

GEM

Power Dissipation Total, at T = 25°C

SYMBOL

Power Dissipation Derating, for T > 25°C

1.25

W/°C

°C

COLLECTOR

Operating Junction Temperature Range

Storage Junction Temperature Range

−40 to +175

300

°C

STG

Max. Lead Temperature for Soldering

(Leads at 1.6 mm from case for 10 s)

°C

GATE

Max. Lead Temperature for Soldering

(Package Body for 10 s)

260

°C

PKG

ESD

Electrostatic Discharge Voltage

at 100 pF, 1500 W

EMITTER

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 3

of this data sheet.

Publication Order Number:

July, 2022 − Rev. 2

FGB3236−F085/D

12 3 4 5 6 7...10

中文翻译

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与FGB3236-F085C相关器件

型号	品牌	获取价格	描述	数据表
FGB3245G2-F085	ONSEMI	获取价格	IGBT，450V，23A，1.3V，320mJ，EcoSPARK® II，N 沟道点火
FGB3440G2-F085	ONSEMI	获取价格	IGBT，400V，25A，1.30V，335mJ，EcoSPARK® II，N 沟道点火
FGB40N60SM	FAIRCHILD	获取价格	600V, 40A Field Stop IGBT
FGB40N60SM	ONSEMI	获取价格	IGBT，600V，40A，场截止
FGB40N6S2	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT
FGB40N6S2	ROCHESTER	获取价格	75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3
FGB40N6S2_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
FGB40N6S2L99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N6S2S62Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N6S2T	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

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