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FGB40T65SPD-F085 PDF预览

FGB40T65SPD-F085

更新时间: 2024-11-06 11:12:31
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 2022K
描述
IGBT,650V,40A,场截止沟槽

FGB40T65SPD-F085 数据手册

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IGBT - Field Stop, Trench  
650 V, 40 A  
FGB40T65SPD-F085  
General Description  
Using the novel field stop 3rd generation IGBT technology,  
FGH40T65SPDF085 offers the optimum performance with both low  
conduction loss and switching loss for a high efficiency operation in  
various applications, while provides 50 V higher blocking voltage and  
rugged high current switching reliability. Meanwhile, this part also  
offers and advantage of outstanding performance in parallel operation.  
www.onsemi.com  
C
Features  
G
Low Saturation Voltage: V  
= 2.0 V (Typ.) @ I = 40 A  
C
CE(sat)  
100% of the Parts are Dynamically Tested *  
Short Circuit Ruggedness > 5 ms @ 25°C  
E
Maximum Junction Temperature : T = 175°C  
J
COLLECTOR  
(FLANGE)  
Fast Switching  
Tight Parameter Distribution  
Positive Temperature Coefficient for Easy Parallel Operation  
Copacked with Soft, Fast Recovery Diode  
AECQ101 Qualified and PPAP Capable  
This Device is PbFree and are RoHS Compliant  
G C E  
2
D PAK3 (TO263, 3LEAD)  
CASE 418AJ  
* V = 400 V, V = 15 V, I = 120 A, R = 20 W, Inductive Load  
CC  
GE  
C
G
MARKING DIAGRAM  
Applications  
Onboard Charger  
AirCon Compressor  
PTC Heater  
ON ZXYYKK  
FGB40T65  
SPD  
Motor Drivers  
Other Automotive Powertrain and Auxiliary Applications  
FGB40T65SPD = Specific Device Code  
Z
XYY  
KK  
= Assembly Plant Code  
= 3Digit Data Code  
= 2Digits Lot Run Traceability  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
FGB40T65SPDF085/D  
April, 2021 Rev. 3  

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