Datasheet > FGB40T65SPD-F085

FGB40T65SPD-F085

更新时间： 2024-11-21 11:12:31

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	2022K
描述
IGBT，650V，40A，场截止沟槽

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数据手册

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FGB40T65SPD-F085 数据手册

IGBT - Field Stop, Trench

650 V, 40 A

FGB40T65SPD-F085

General Description

Using the novel field stop 3rd generation IGBT technology,

FGH40T65SPD−F085 offers the optimum performance with both low

conduction loss and switching loss for a high efficiency operation in

various applications, while provides 50 V higher blocking voltage and

rugged high current switching reliability. Meanwhile, this part also

offers and advantage of outstanding performance in parallel operation.

www.onsemi.com

Features

• Low Saturation Voltage: V

= 2.0 V (Typ.) @ I = 40 A

CE(sat)

• 100% of the Parts are Dynamically Tested *

• Short Circuit Ruggedness > 5 ms @ 25°C

• Maximum Junction Temperature : T = 175°C

COLLECTOR

(FLANGE)

• Fast Switching

• Tight Parameter Distribution

• Positive Temperature Coefficient for Easy Parallel Operation

• Copacked with Soft, Fast Recovery Diode

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and are RoHS Compliant

G C E

D PAK−3 (TO−263, 3−LEAD)

CASE 418AJ

* V = 400 V, V = 15 V, I = 120 A, R = 20 W, Inductive Load

MARKING DIAGRAM

Applications

• Onboard Charger

• AirCon Compressor

• PTC Heater

ON ZXYYKK

FGB40T65

SPD

• Motor Drivers

• Other Automotive Power−train and Auxiliary Applications

FGB40T65SPD = Specific Device Code

XYY

= Assembly Plant Code

= 3−Digit Data Code

= 2−Digits Lot Run Traceability

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

FGB40T65SPD−F085/D

April, 2021 − Rev. 3

12 3 4 5 6 7...10

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