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FGB40N6S2L99Z PDF预览

FGB40N6S2L99Z

更新时间： 2024-09-20 14:42:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 栅瞄准线功率控制晶体管
页数 文件大小 规格书
11页 190K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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FGB40N6S2L99Z 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.68
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
最大集电极电流 (IC)：75 A集电极-发射极最大电压：600 V
配置：SINGLEJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：153 ns标称接通时间 (ton)：32 ns
Base Number Matches：1

FGB40N6S2L99Z 数据手册

 浏览型号FGB40N6S2L99Z的Datasheet PDF文件第2页浏览型号FGB40N6S2L99Z的Datasheet PDF文件第3页浏览型号FGB40N6S2L99Z的Datasheet PDF文件第4页浏览型号FGB40N6S2L99Z的Datasheet PDF文件第5页浏览型号FGB40N6S2L99Z的Datasheet PDF文件第6页浏览型号FGB40N6S2L99Z的Datasheet PDF文件第7页 
July 2001  
FGH40N6S2, FGP40N6S2, FGB40N6S2  
600V, SMPS II Series N-Channel IGBT  
General Description  
Features  
The FGH40N6S2, FGP40N6S2, and FGB40N6S2 are Low  
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-  
ing the fast switching speed of the SMPS IGBTs along with  
lower gate charge and plateau voltage and avalanche capa-  
bility (UIS). These LGC devices shorten delay times, and  
reduce the power requirement of the gate drive. These de-  
vices are ideally suited for high voltage switched mode pow-  
er supply applications where low conduction loss, fast  
switching times and UIS capability are essential. SMPS II  
LGC devices have been specially designed for:  
• 100kHz Operation at 390V,24A  
• 200kHZ Operation at 390V, 18A  
• 600V Switching SOA Capability  
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC  
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V  
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ  
• Low Conduction Loss  
•
•
•
•
•
•
Power Factor Correction (PFC) circuits  
Full bridge topologies  
Half bridge topologies  
Push-Pull circuits  
Uninterruptible power supplies  
Zero voltage and zero current switching circuits  
Formerly Developmental Type TA49438.  
Symbol  
Package  
JEDEC STYLE TO-247  
JEDEC STYLE TO-220AB  
JEDEC STYLE TO-263AB  
C
E
C
E
C
G
G
C
G
G
E
E
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
BV  
Parameter  
Collector to Emitter Breakdown Voltage  
Collector Current Continuous, T = 25°C  
Ratings  
Units  
600  
75  
V
A
A
A
V
V
CES  
I
C25  
C
I
Collector Current Continuous, T = 110°C  
35  
C110  
C
I
Collector Current Pulsed (Note 1)  
Gate to Emitter Voltage Continuous  
Gate to Emitter Voltage Pulsed  
180  
±20  
±30  
CM  
V
GES  
GEM  
V
SSOA  
Switching Safe Operating Area at T = 150°C, Figure 2  
200A at 600V  
260  
J
E
Pulsed Avalanche Energy, I = 20A, L = 1.3mH, V = 50V  
mJ  
W
AS  
CE  
DD  
P
Power Dissipation Total T = 25°C  
290  
D
C
Power Dissipation Derating T > 25°C  
2.33  
W/°C  
°C  
C
T
Operating Junction Temperature Range  
Storage Junction Temperature Range  
-55 to 150  
-55 to 150  
J
T
°C  
STG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. Pulse width limited by maximum junction temperature.  
©2001 Fairchild Semiconductor Corporation  
FGH40N6S2, FGP40N6S2, FGB40N6S2 Rev. A  
1234567...11

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