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FGB5065G2-F085 PDF预览

FGB5065G2-F085

更新时间： 2024-09-21 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 185K
描述
EcoSPARK®2 HV-HE IGBT500 mJ, 650 V, N-Channel PTC Heater IGBT

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FGB5065G2-F085 数据手册

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DATA SHEET  
www.onsemi.com  
EcoSPARKꢀ 2 HV-HE IGBT  
500 mJ, 650 V, N-Channel PTC  
Heater IGBT  
Collector  
(Flange)  
2
D PAK−3  
CASE 418AJ  
FGB5065G2-F085  
Features  
• SCIS Energy = 500 mJ at T = 25°C  
J
• Logic Level Gate Drive  
COLLECTOR  
• RoHS Compliant  
• Pending AEC−Q101 Qualification and PPAP Capable  
R
1
GATE  
Applications  
R
2
• PTC Heater Circuits  
• High Current Systems  
• Rugged Applications  
EMITTER  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Value  
Unit  
MARKING DIAGRAM  
BV  
Collector−to−Emitter Breakdown Voltage  
C
650  
V
CER  
1 Gate  
(I = 1 mA)  
AYWWZZ  
XXX  
XXXXXX  
2 Collector  
3 Emitter  
4 Collector  
BV  
Emitter−to−Collector Voltage − Reverse  
28  
500  
300  
78  
V
mJ  
mJ  
A
ECS  
Battery Condition (I = 10 mA)  
C
E
Self Clamping Inductive Switching  
Energy (Note 1)  
SCIS25  
A
Y
= Assembly Location  
= Year  
E
Self Clamping Inductive Switching  
Energy (Note 2)  
SCIS150  
WW  
ZZ  
XXXX  
= Work Week  
= Lot Traceability Code  
= Device Code  
I
Collector Current Continuous  
C25  
at V = 5.0 V, T = 25°C  
GE  
C
I
Collector Current Continuous  
at V = 5.0 V, T = 100°C  
55  
A
C100  
GE  
C
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2  
of this data sheet.  
V
Gate−to−Emitter Voltage Continuous  
Power Dissipation Total, T = 25°C  
10  
300  
2
V
W
GEM  
P
D
C
Power Dissipation Derating, T > 25°C  
W/°C  
°C  
C
T , T  
J
Operating Junction and Storage  
Temperature Range  
−55 to  
+175  
STG  
T
L
Lead Temperature for Soldering  
Purposes (1/8″ from case for 10 s)  
300  
°C  
T
Reflow Soldering according to JESD020C  
260  
8
°C  
PKG  
ESD  
HBM−Electrostatic Discharge Voltage  
at 100 pF, 1500 W  
kV  
2
kV  
CDM−Electrostatic Discharge Voltage  
at 1 W  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Self clamped inductive Switching Energy (E  
) of 500 mJ is based on the  
SCIS25  
test conditions that is starting T = 25°C, L = 3 mHy, I  
= 18.3 A, V  
=
J
SCIS  
CC  
100 V during inductor charging and VCC = 0 V during time in clamp.  
2. Self Clamped inductive Switching Energy (E ) of 300 mJ is based on  
SCIS150  
the test conditions that is starting T = 150°C, L = 3 mHy, I  
= 14.2 A, V  
=
J
SCIS  
CC  
100 V during inductor charging and V = 0 V during time in clamp.  
CC  
© Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
May, 2023 − Rev. 0  
FGB5065G2−F085/D  
 
12345678

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