Datasheet > FGB3440G2-F085

FGB3440G2-F085

更新时间： 2024-11-09 11:12:15

品牌	Logo	应用领域
安森美 - ONSEMI		栅双极性晶体管
页数	文件大小	规格书
9页	1260K
描述
IGBT，400V，25A，1.30V，335mJ，EcoSPARK® II，N 沟道点火

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FGB3440G2-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	1.08
最大集电极电流 (IC)：	26.9 A	集电极-发射极最大电压：	390 V
最大降落时间（tf）：	15000 ns	门极发射器阈值电压最大值：	2.2 V
门极-发射极最大电压：	12 V	湿度敏感等级：	1
最高工作温度：	175 °C	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	166 W
最大上升时间（tr）：	7000 ns	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

FGB3440G2-F085 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与FGB3440G2-F085相关器件

型号	品牌	获取价格	描述	数据表
FGB40N60SM	FAIRCHILD	获取价格	600V, 40A Field Stop IGBT
FGB40N60SM	ONSEMI	获取价格	IGBT，600V，40A，场截止
FGB40N6S2	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT
FGB40N6S2	ROCHESTER	获取价格	75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3
FGB40N6S2_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
FGB40N6S2L99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N6S2S62Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N6S2T	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
FGB40N6S2T	ROCHESTER	获取价格	75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3
FGB40T65SP	ONSEMI	获取价格	Field Stop Trench IGBT

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