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FGB40N60SM PDF预览

FGB40N60SM

更新时间: 2024-09-20 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
9页 850K
描述
600V, 40A Field Stop IGBT

FGB40N60SM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, D2PAK-3/2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.65
外壳连接:COLLECTOR最大集电极电流 (IC):80 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):17 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):349 W
最大上升时间(tr):28 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):132 ns
标称接通时间 (ton):37 nsBase Number Matches:1

FGB40N60SM 数据手册

 浏览型号FGB40N60SM的Datasheet PDF文件第2页浏览型号FGB40N60SM的Datasheet PDF文件第3页浏览型号FGB40N60SM的Datasheet PDF文件第4页浏览型号FGB40N60SM的Datasheet PDF文件第5页浏览型号FGB40N60SM的Datasheet PDF文件第6页浏览型号FGB40N60SM的Datasheet PDF文件第7页 
November 2011  
FGB40N60SM  
tm  
600V, 40A Field Stop IGBT  
Features  
General Description  
o
Maximum Junction Temperature : T =175 C  
Using Novel Field Stop IGBT Technology, Fairchild’s new series  
of Field Stop 2nd generation IGBTs offer the optimum perfor-  
mance for welding and PFC applications where low conduction  
and switching losses are essential.  
J
Positive Temperaure Co-efficient for easy parallel operating  
High current capability  
Low saturation voltage: V  
High input impedance  
Fast switching  
=1.9V(Typ.) @ I = 40A  
CE(sat)  
C
Tighten Parameter Distribution  
RoHS compliant  
IR Reflow Only  
Applications  
Welding, PFC  
C
COLLECTOR  
(FLANGE)  
G
TO-263AB/D2-PAK  
G
C
E
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Units  
V
V
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
600  
20  
V
V
CES  
GES  
o
@ T = 25 C  
80  
A
C
I
C
o
Collector Current  
@ T = 100 C  
40  
A
C
I
Pulsed Collector Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
120  
A
CM (1)  
o
@ T = 25 C  
349  
W
W
C
P
D
o
@ T = 100 C  
174  
C
o
T
-55 to +175  
-55 to +175  
C
J
o
T
C
stg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
o
T
300  
C
L
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
©2011 Fairchild Semiconductor Corporation  
FGB40N60SM Rev. A  
1
www.fairchildsemi.com  

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