July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Package
Symbol
C
E
JEDEC STYLE TO-247
JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB
C
E
G
C
G
G
C
G
E
E
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
BV
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T = 25°C
Ratings
600
Units
V
A
A
A
V
V
CES
I
45
C25
C
I
Collector Current Continuous, T = 110°C
20
C110
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
108
CM
V
±20
GES
GEM
V
±30
SSOA
Switching Safe Operating Area at T = 150°C, Figure 2
60A at 600V
150
J
E
Pulsed Avalanche Energy, I = 12A, L = 2mH, V = 50V
mJ
W
AS
CE
DD
P
Power Dissipation Total T = 25°C
167
D
C
Power Dissipation Derating T > 25°C
1.33
W/°C
°C
C
T
Operating Junction Temperature Range
Storage Junction Temperature Range
-55 to 150
-55 to 150
J
T
°C
STG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A