型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGB3236-F085 | ONSEMI |
获取价格 |
IGBT,360V,27A,1.32V,320mJ,EcoSPARK® II,N 沟道点火 | |
FGB3236-F085C | ONSEMI |
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IGBT, 360V, 27A, 1.32V, 320mJ, EcoSPARK®, N-C | |
FGB3245G2-F085 | ONSEMI |
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IGBT,450V,23A,1.3V,320mJ,EcoSPARK® II,N 沟道点火 | |
FGB3440G2-F085 | ONSEMI |
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IGBT,400V,25A,1.30V,335mJ,EcoSPARK® II,N 沟道点火 | |
FGB40N60SM | FAIRCHILD |
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600V, 40A Field Stop IGBT | |
FGB40N60SM | ONSEMI |
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IGBT,600V,40A,场截止 | |
FGB40N6S2 | FAIRCHILD |
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600V, SMPS II Series N-Channel IGBT | |
FGB40N6S2 | ROCHESTER |
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75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 | |
FGB40N6S2_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE | |
FGB40N6S2L99Z | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB |