Datasheet > FGB3040CS_12

FGB3040CS_12

更新时间： 2024-09-20 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
9页	590K
描述
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT

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FGB3040CS_12 数据手册

April 2012

FGB3040CS

EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT

General Description

Applications

The FGB3040CS is an lgnition IGBT that offers outstand-

ing SCIS capability along with a ratiometric emitter current

sensing capability. This sensing is based on a emitter

active area ratio of 200:1. The output is provided through a

fourth (sense) lead. This signal provides a current level

that is proportional to the main collector to emitter current.

The effective ratio as measured on the sense lead is a

function of the sense output, the collector current and the

gate to emitter drive voltage.

Smart Automotive lgnition Coil Driver Circuits

ECU Based Systems

Distributorless Based Systems

Coil on Plug Based Systems

Features

SCIS Energy = 300mJ at T_J= 25^oC

Logic Level Gate Drive

Qualified to AEC Q101

RoHS Compliant

Package

Symbol

Device Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BV_CERCollector to Emitter Breakdown Voltage (I_C= 2mA)

430

BV_ECSEmitter to Collector Breakdown Voltage (I_C= 1mA) (Reverse Battery Condition)

E_SCIS25Self Clamping Inductive Switching Energy (at starting T_J= 25°C)

E_SCIS150Self Clamping Inductive Switching Energy (at starting T_J= 150°C)

300

170

I_C25

Continuous Collector Current, at V_GE= 4.0V, T_C= 25°C

Continuous Collector Current, at V_GE= 4.0V, T_C= 110°C

Maximum Continuous Gate to Emitter Voltage

Power Dissipation, at T_C= 25°C

I_C110

V_GEM

±10

150

P_D

Power Dissipation Derating, for T_C> 25^oC

W/^oC

^oC

T_J

Operating Junction Temperature Range

-40 to 175

300

T_STG

T_L

Storage Junction Temperature Range

Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)

Max. Package Temp. for Soldering (Package Body for 10 sec)

Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)

T_PKG

ESD

260

@2012 Fairchild Semiconductor Corporation

FGB3040CS Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7...9

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与FGB3040CS_12相关器件

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FGB30N6S2D	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2DT	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2T	ROCHESTER	获取价格	45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3
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