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FGB30N6S2 PDF预览

FGB30N6S2

更新时间： 2024-09-19 22:29:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关双极性晶体管
页数 文件大小 规格书
8页 174K
描述
600V, SMPS II Series N-Channel IGBT

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中文翻译

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FGB30N6S2 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：PLASTIC, D2PAK-3
针数：3Reach Compliance Code：not_compliant
风险等级：5.64其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：45 A
集电极-发射极最大电压：600 V配置：SINGLE
最大降落时间（tf）：100 ns门极发射器阈值电压最大值：5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：167 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：163 ns
标称接通时间 (ton)：28 nsBase Number Matches：1

FGB30N6S2 数据手册

 浏览型号FGB30N6S2的Datasheet PDF文件第2页浏览型号FGB30N6S2的Datasheet PDF文件第3页浏览型号FGB30N6S2的Datasheet PDF文件第4页浏览型号FGB30N6S2的Datasheet PDF文件第5页浏览型号FGB30N6S2的Datasheet PDF文件第6页浏览型号FGB30N6S2的Datasheet PDF文件第7页 
August 2003  
FGH30N6S2 / FGP30N6S2 / FGB30N6S2  
600V, SMPS II Series N-Channel IGBT  
General Description  
Features  
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low  
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-  
ing the fast switching speed of the SMPS IGBTs along with  
lower gate charge and plateau voltage and avalanche capa-  
bility (UIS). These LGC devices shorten delay times, and  
reduce the power requirement of the gate drive. These de-  
vices are ideally suited for high voltage switched mode pow-  
er supply applications where low conduction loss, fast  
switching times and UIS capability are essential. SMPS II  
LGC devices have been specially designed for:  
• 100kHz Operation at 390V, 14A  
• 200kHZ Operation at 390V, 9A  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C  
• Low Gate Charge . . . . . . . . . 23nC at V = 15V  
GE  
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ  
• Low Conduction Loss  
•
•
•
•
•
•
Power Factor Correction (PFC) circuits  
Full bridge topologies  
Half bridge topologies  
Push-Pull circuits  
Uninterruptible power supplies  
Zero voltage and zero current switching circuits  
Formerly Developmental Type TA49367.  
Symbol  
Package  
C
TO-247  
E
C
E
TO-220AB  
C
G
G
TO-263AB  
G
G
E
E
COLLECTOR  
(Back-Metal)  
COLLECTOR  
(Flange)  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
BV  
Parameter  
Collector to Emitter Breakdown Voltage  
Collector Current Continuous, T = 25°C  
Ratings  
Units  
600  
45  
V
A
A
A
V
V
CES  
I
C25  
C
I
Collector Current Continuous, T = 110°C  
20  
C110  
C
I
Collector Current Pulsed (Note 1)  
Gate to Emitter Voltage Continuous  
Gate to Emitter Voltage Pulsed  
108  
CM  
V
±20  
GES  
GEM  
V
±30  
SSOA  
Switching Safe Operating Area at T = 150°C, Figure 2  
60A at 600V  
150  
J
E
Pulsed Avalanche Energy, I = 20A, L = 1.3mH, V = 50V  
mJ  
W
AS  
CE  
DD  
P
Power Dissipation Total T = 25°C  
167  
D
C
Power Dissipation Derating T > 25°C  
1.33  
W/°C  
°C  
C
T
Operating Junction Temperature Range  
Storage Junction Temperature Range  
-55 to 150  
-55 to 150  
J
T
°C  
STG  
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. Pulse width limited by maximum junction temperature.  
©2003 Fairchild Semiconductor Corporation  
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1  
12345678

中文翻译

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