Datasheet > FGB30N6S2D

FGB30N6S2D

更新时间： 2024-09-19 22:29:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管开关双极性晶体管
页数	文件大小	规格书
12页	275K
描述
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

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FGB30N6S2D 数据手册

July 2001

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth^TMDiode

General Description

Features

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are

Low Gate Charge, Low Plateau Voltage SMPS II IGBTs

combining the fast switching speed of the SMPS IGBTs

along with lower gate charge and plateau voltage and ava-

lanche capability (UIS). These LGC devices shorten delay

times, and reduce the power requirement of the gate drive.

These devices are ideally suited for high voltage switched

mode power supply applications where low conduction

loss, fast switching times and UIS capability are essential.

SMPS II LGC devices have been specially designed for:

• 100kHz Operation at 390V, 14A

• 200kHZ Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125^oC

• Low Gate Charge . . . . . . . . . 23nC at V_GE= 15V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ

• Low Conduction Loss

•

Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49336

Diode formerly Developmental Type TA49390

Package

Symbol

JEDEC STYLE TO-247

JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Collector to Emitter Breakdown Voltage

Collector Current Continuous, T = 25°C

Ratings

600

Units

CES

C25

Collector Current Continuous, T = 110°C

C110

Collector Current Pulsed (Note 1)

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed

108

±20

GES

GEM

±30

SSOA

Switching Safe Operating Area at T = 150°C, Figure 2

60A at 600V

150

Pulsed Avalanche Energy, I = 12A, L = 2mH, V = 50V

Power Dissipation Total T = 25°C

167

Power Dissipation Derating T > 25°C

1.33

W/°C

°C

Operating Junction Temperature Range

Storage Junction Temperature Range

-55 to 150

°C

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

12 3 4 5 6 7...12

中文翻译

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与FGB30N6S2D相关器件

型号	品牌	获取价格	描述	数据表
FGB30N6S2DT	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2T	ROCHESTER	获取价格	45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3
FGB30N6S2T	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
FGB3236	FAIRCHILD	获取价格	FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT
FGB3236-F085	ONSEMI	获取价格	IGBT，360V，27A，1.32V，320mJ，EcoSPARK® II，N 沟道点火
FGB3236-F085C	ONSEMI	获取价格	IGBT, 360V, 27A, 1.32V, 320mJ, EcoSPARK®, N-C
FGB3245G2-F085	ONSEMI	获取价格	IGBT，450V，23A，1.3V，320mJ，EcoSPARK® II，N 沟道点火
FGB3440G2-F085	ONSEMI	获取价格	IGBT，400V，25A，1.30V，335mJ，EcoSPARK® II，N 沟道点火
FGB40N60SM	FAIRCHILD	获取价格	600V, 40A Field Stop IGBT
FGB40N60SM	ONSEMI	获取价格	IGBT，600V，40A，场截止

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