Datasheet > FDMC2523P_12

FDMC2523P_12

更新时间： 2024-10-28 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	311K
描述
P-Channel QFETÂ® -150V, -3A, 1.5Î©

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FDMC2523P_12 数据手册

November 2012

FDMC2523P

P-Channel QFET^®

-150V, -3A, 1.5Ω

Features

General Description

Max r_DS(on)= 1.5Ω at V_GS= -10V, I_D= -1.5A

Low Crss ( typical 10pF)

Fast Switching

These P-Channel MOSFET enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

planar stripe, DMOS technology. This advanced technology has

been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices

are well suited for low voltage applications such as audio

amplifier, high efficiency switching DC/DC converters, and DC

motor control.

Low gate charge ( typical 6.2 nC )

Improved dv / dt capability

RoHS Compliant

Application

Active Clamp Switch

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

-150

±30

T_C= 25°C

-3

-1.8

I_D

T_C= 100°C

-Pulsed

-12

P_D

Power Dissipation (Steady State) T_C= 25°C

°C

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

Peak Diode Recovery dv/dt (Note 2)

°C

dv/dt

-5

V/ns

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

FDMC2523P

MLP 3.3x3.3

13 ’’

3000 units

FDMC2523P Rev.C3

www.fairchildsemi.com

12 3 4 5 6 7

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