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FDMC2610 PDF预览

FDMC2610

更新时间: 2024-10-29 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
7页 299K
描述
N 沟道 UltraFET Trench® MOSFET 200V,9.5A,200mΩ

FDMC2610 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-F8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.96
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):9.5 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.397 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F8JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):42 W最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

FDMC2610 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
UltraFET Trench  
V
R
MAX  
I MAX  
D
DS  
DS(ON)  
200 V  
200 mW @ 10 V  
215 mW @ 6 V  
9.5 A  
200 V, 9.5 A, 200 mW  
FDMC2610  
General Description  
D
5
4
G
This NChannel MOSFET is a rugged gate version of onsemi‘s  
advanced POWERTRENCH process. It has been optimized  
for power management applications.  
D
D
6
7
3
2
1
S
S
®
8
S
Features  
D
Max R  
Max R  
= 200 mW at V = 10 V, I = 2.2 A  
GS D  
DS(on)  
= 215 mW at V = 6 V, I = 1.5 A  
N-CHANNEL MOSFET  
Pin 1  
DS(on)  
GS  
D
Low Profile 1 mm Max in a Power 33  
PbFree, Halide Free and RoHS Compliant  
S
8
S
7
S
6
G
5
Applications  
DCDC Conversion  
D
1
D
2
D
3
D
4
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
Top  
Bottom  
A
Symbol  
Parameter  
Drain to Source Voltage  
Value  
200  
20  
Unit  
V
WDFN8 3.3 y 3.3, 0.65P  
CASE 511DH  
V
DS  
V
GS  
Gate to Source Voltage  
V
MARKING DIAGRAM  
I
Drain Current:  
A
D
Continuous (Silicon limited)  
Continuous (Note 1a)  
Pulsed  
T
A
= 25°C  
9.5  
2.2  
15  
C
T = 25°C  
FDMC  
2610  
ALYW  
E
AS  
Single Pulse Avalanche Energy (Note 3)  
Power Dissipation:  
6
mJ  
W
P
D
T
A
= 25°C  
42  
2.1  
C
T = 25°C (Note 1a)  
T , T  
Operating and Storage Junction Temperature  
Range  
55 to  
°C  
J
STG  
FDMC2610 = Specific Device Code  
+150  
A
= Assembly Site  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
L
YW  
= Wafer Lot Number  
= Assembly Start Week  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
Symbol  
Parameter  
Value  
3
Unit  
Device  
FDMC2610  
Package  
Shipping  
3000 /  
Tape & Reel  
Thermal Resistance, Junction to Case  
°C/W  
R
q
JC  
WDFN8  
(PbFree,  
Halide Free)  
R
Thermal Resistance, Junction to Ambient  
(Note 1a)  
60  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
April, 2023 Rev. 2  
FDMC2610/D  

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