Datasheet > FDC6301N

FDC6301N

更新时间： 2024-09-16 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
6页	315K
描述
双 N 沟道，数字 FET，25V，0.22A，4Ω

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中文翻译

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FDC6301N 数据手册

DATA SHEET

www.onsemi.com

Dual, N-Channel, Digital FET

FDC6301N

General Description

These dual N−Channel logic level enhancement mode field effect

transistors are produced using onsemi’s proprietary, high cell density,

DMOS technology. This very high density process is especially

tailored to minimize on−state resistance. This device has been

designed especially for low voltage applications as a replacement for

digital transistors. Since bias resistors are not required, these

N−Channel FET’s can replace several digital transistors, with a variety

of bias resistors.

TSOT23 6−Lead

SUPERSOTt−6

CASE 419BL

MARKING DIAGRAM

301 MG

Features

• 25 V, 0.22 A Continuous, 0.5 A Peak

301 = Specific Device Code

♦ R

= 5 W @ V = 2.7 V

DS(on)

= Assembly Operation Month

= 4 W @ V = 4.5 V

DS(on)

= Pb−Free Package

• Very Low Level Gate Drive Requirements Allowing Direct

Operation in 3 V Circuits. V < 1.5 V

(Note: Microdot may be in either location)

GS(th)

• Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model

• This is a Pb−Free and Halide Free Device

PIN ASSIGNMENT

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

, V

Parameter

Ratings

Unit

Drain−Source Voltage,

DSS

Power Supply Voltage

Gate−Source Voltage, V

Drain / Output Current

GSS

, V

−0.5 to + 8

0.22

I , I

− Continuous

− Pulsed

OUT

0.5

Maximum Power

Dissipation

(Note 1a)

(Note 1b)

0.9

0.7

T , T

Operating and Storage Temperature

Range

−55 to +150

°C

STG

INVERTER APPLICATION

ESD

Electrostatic Discharge Rating

MIL−STD−883D Human Body Model

(100 pF / 1500 W)

6.0

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

OUT

GND

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

RqJA

Thermal Resistance, Junction−to−Ambient

(Note 1a)

140

°C/W

RqJC

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

FDC6301N

TSOT−23−6

(SUPERSOTt−6)

(Pb−Free)

3000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2023 − Rev. 5

FDC6301N/D

12 3 4 5 6

中文翻译

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与FDC6301N相关器件

型号	品牌	获取价格	描述	数据表
FDC6301N_01	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Meta
FDC6301NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 2-Element, N-Channel, Silicon, Metal
FDC6302P	FAIRCHILD	获取价格	Digital FET, Dual P-Channel
FDC6302P	ONSEMI	获取价格	双 P 沟道，数字 FET，-25V，-0.12A，10Ω
FDC6302P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6302PD84Z	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6302PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6303	FAIRCHILD	获取价格	Digital FET, Dual N-Channel
FDC6303N	FAIRCHILD	获取价格	Digital FET, Dual N-Channel

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