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FDC6305N PDF预览

FDC6305N

更新时间: 2024-11-04 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
8页 247K
描述
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6305N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.29
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:5353Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SSOT 6LSamacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2.7 A
最大漏极电流 (ID):2.7 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.96 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC6305N 数据手册

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March 1999  
FDC6305N  
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET  
Features  
General Description  
2.7 A, 20 V. RDS(ON) = 0.08 @ VGS = 4.5 V  
RDS(ON) = 0.12 @ VGS = 2.5 V  
These N-Channel low threshold 2.5V specified  
MOSFETs are produced using Fairchild Semiconductor's  
advanced PowerTrench process that has been  
especially tailored to minimize on-state resistance and  
yet maintain low gate charge for superior switching  
performance.  
Low gate charge (3.5nC typical).  
Fast switching speed.  
Applications  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
.
DC/DC converter  
Motor driving  
SuperSOTTM-6 package: small footprint (72% smaller  
than standard SO-8); low profile (1mm thick).  
D2  
S1  
4
5
3
2
1
D1  
G2  
S2  
6
SuperSOT TM-6  
G1  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
20  
V
V
A
8
±
(Note 1a)  
Drain Current - Continuous  
- Pulsed  
2.7  
8
0.96  
(Note 1a)  
(Note 1b)  
PD  
Power Dissipation for Single Operation  
W
0.9  
(Note 1c)  
0.7  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
θ
(Note 1a)  
(Note 1)  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
130  
60  
C/W  
C/W  
JA  
°
°
JC  
θ
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
.305  
FDC6305N  
7’’  
8mm  
3000 units  
1999 Fairchild Semiconductor Corporation  
FDC6305N, Rev. C  

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