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FDC6320C PDF预览

FDC6320C

更新时间: 2024-11-07 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
9页 484K
描述
双 N 和 P 沟道数字 FET,25V

FDC6320C 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.96
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):0.22 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC6320C 数据手册

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