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FDC6322CS62Z PDF预览

FDC6322CS62Z

更新时间: 2024-11-27 19:57:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 102K
描述
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

FDC6322CS62Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (ID):0.22 A
最大漏源导通电阻:4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC6322CS62Z 数据手册

 浏览型号FDC6322CS62Z的Datasheet PDF文件第2页浏览型号FDC6322CS62Z的Datasheet PDF文件第3页浏览型号FDC6322CS62Z的Datasheet PDF文件第4页浏览型号FDC6322CS62Z的Datasheet PDF文件第5页浏览型号FDC6322CS62Z的Datasheet PDF文件第6页浏览型号FDC6322CS62Z的Datasheet PDF文件第7页 
November 1997  
FDC6322C  
Dual N & P Channel , Digital FET  
General Description  
Features  
N-Ch 25 V, 0.22 A, RDS(ON) = 5 W @ VGS= 2.7 V.  
These dual N & P Channel logic level enhancement mode field  
effec transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance.  
The device is an improved design especially for low voltage  
applications as a replacement for bipolar digital transistors in  
load switching applications. Since bias resistors are not  
required, this dual digital FET can replace several digital  
transistors with difference bias resistors.  
P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 W @ VGS= -2.7 V.  
Very low level gate drive requirements allowing direct  
operation in 3 V circuits. VGS(th) < 1.5 V.  
Gate-Source Zener for ESD ruggedness.  
>6kV Human Body Model  
Replace NPN & PNP digital transistors.  
SuperSOTTM-6  
Mark: .322  
SuperSOTTM-8  
SOT-23  
SOIC-16  
SO-8  
SOT-223  
4
3
2
1
5
6
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol Parameter  
N-Channel  
P-Channel  
Units  
VDSS, VCC Drain-Source Voltage, Power Supply Voltage  
25  
8
-25  
-8  
V
V
A
Gate-Source Voltage,  
Drain/Output Current  
VGSS, VIN  
ID, IO  
- Continuous  
- Pulsed  
0.22  
0.5  
-0.46  
-1  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
0.9  
W
PD  
0.7  
Operating and Storage Tempature Ranger  
-55 to 150  
6
°C  
kV  
TJ,TSTG  
ESD  
Electrostatic Discharge Rating MIL-STD-883D  
Human Body Model (100pf / 1500 Ohm)  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
140  
60  
°C/W  
°C/W  
© 1997 Fairchild Semiconductor Corporation  
FDC6322C.Rev B1  

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