February 1999
FDC6330L
Integrated Load Switch
Features
General Description
• V
V
= 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω
IN (ON)
This device is particularly suited for compact power
management in portable electronic equipment where 3V
to 20V input and 2.3A output current capability are needed.
This load switch integrates a small N-Channel power
MOSFET (Q1) which drives a large P-Channel power
MOSFET (Q2) in one tiny SuperSOTTM-6 package.
DROP
= 0.2V @ V = 5V,I =L1.6 A. R = 0.125 Ω.
IN L (ON)
DROP
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6kV Human Body Model).
• High performance PowerTrenchTM technology for
extremely low on-resistance.
• SuperSOTTM-6 package design using copper lead frame
for superior thermal and electrical capabilities.
Applications
• Power management
• Load actuation
Vout,C1
Vin,R1
3
4
5
6
EQUIVALENT CIRCUIT
Q2
ON/OFF
2
1
Vout,C1
R2
VDR OP
+
-
OUT
IN
Q1
R1,C1
ON/OFF
SuperSOT TM-6
See Application Circuit
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
(Note 1)
(Note 2)
(Note 1)
VIN
Input Voltage Range
On/Off Voltage Range
Load Current - Continuous
- Pulsed
3 - 20
V
VON/OFF
ID
1.5 - 8
2.3
V
A
10
PD
Maximum Power Dissipation
0.7
W
TJ, Tstg
ESD
Operating and Storage Temperature Range
-55 to +150
6
C
°
Electrostatic Discharge Rating MIL-STD-883D
Human-Body-Model (100pf/1500 Ohm)
kV
Thermal Characteristics
(Note 2)
(Note 2)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
180
60
C/W
C/W
θJA
θJC
°
°
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDC6330L
7’’
8mm
3000 units
330 ( Denotes pin 1)
.
.
1999 Fairchild Semiconductor Corporation
FDC6330L Rev. C