Datasheet > FDC6325L

FDC6325L

更新时间： 2024-11-26 11:10:55

品牌	Logo	应用领域
安森美 - ONSEMI		开关驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
5页	304K
描述
集成式负载开关

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中文翻译

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数据手册
替代型号

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FDC6325L 数据手册

DATA SHEET

www.onsemi.com

Integrated Load Switch

FDC6325L

TSOT23 6−Lead

CASE 419BL

General Description

This device is particularly suited for compact power management in

portable electronic equipment where 2.5 V to 8 V input and 1.8 A

output current capability are needed. This load switch integrates a

small N−Channel power MOSFET (Q1) which drives a large

P−Channel power MOSFET (Q2) in one tiny SUPERSOTt−6

package.

MARKING DIAGRAM

XXX MG

Features

• V

= 0.2 V @ V = 5 V, I = 1.5 A, R

= 0.13 W

DROP

(ON)

XXX = Specific Device Code

= Date Code

= 0.2 V @ V = 3.3 V, I = 1.2 A, R = 0.16 W

(ON)

= Pb−Free Package

(Note: Microdot may be in either location)

= 0.2 V @ V = 2.5 V, I = 1 A, R

= 0.18 W

(ON)

• SUPERSOTt−6 Package Design Using Copper Lead Frame for

Superior Thermal and Electrical Capabilities

• This is a Pb−Free Device

PINOUT

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Vout,C1

Vin,R1

Symbol

Parameter

Input Voltage Range

On/Off Voltage Range

Load Current

Continuous (Note 1)

Pulsed (Notes 1 & 3)

Ratings

2.8 − 8

1.5 − 8

1.8

Unit

ON/OFF

Vout,C1

R1,C1

Maximum Power Dissipation (Note 2)

0.7

°C

T , T

Operating and Storage Temperature Range

−55 to 150

STG

(See Application Circuit)

ESD

Electrostatic Discharge Rating

MIL−STD−883D Human Body Model

(100 pF / 1500 W)

EQUIVALENT CIRCUIT

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

DROP

−

1. V = 8 V, V

= 8 V, T_A= 25°C

ON/OFF

OUT

2. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

ON/OFF

is determined by the user’s board design.

THERMAL CHARACTERISTICS

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Symbol

Parameter

Ratings

Unit

RqJA

Thermal Resistance, Junction−to−Ambient

(Note 2)

180

°C/W

RqJC

Thermal Resistance, Junction−to−Case

(Note 2)

°C/W

Publication Order Number:

March, 2022 − Rev. 5

FDC6325L/D

12 3 4 5

中文翻译

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FDC6325L 替代型号

型号	品牌	替代类型	描述	数据表
FDC6323L	ONSEMI	类似代替	集成式负载开关
SI3865BDV-T1-E3	VISHAY	功能相似	IC 1 A BUF OR INV BASED PRPHL DRVR, PDSO6, ROHS COMPLIANT, TSOP-6, Peripheral Driver

与FDC6325L相关器件

型号	品牌	获取价格	描述	数据表
FDC6325L_NL	FAIRCHILD	获取价格	Buffer/Inverter Based Peripheral Driver, 1 Driver, 1A, MOS, PDSO6, SOT-6
FDC6326	FAIRCHILD	获取价格	Integrated Load Switch
FDC6326L	FAIRCHILD	获取价格	Integrated Load Switch
FDC6326L	ONSEMI	获取价格	集成式负载开关
FDC6326L_NL	FAIRCHILD	获取价格	Buffer/Inverter Based Peripheral Driver, 1 Driver, MOS, PDSO6, SOT-6
FDC6327	FAIRCHILD	获取价格	Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6327C	ONSEMI	获取价格	双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定
FDC6327C	FAIRCHILD	获取价格	Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6327CD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel,
FDC6327C-F169	ONSEMI	获取价格	双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定

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