FDC6333C_NL

更新时间： 2024-11-21 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	99K
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数据手册

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FDC6333C_NL 数据手册

October 2001

FDC6333C

30V N & P-Channel PowerTrench^ÒMOSFETs

General Description

Features

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

Q1 2.5 A, 30V.

Q2 –2.0 A, 30V.

Low gate charge

R_DS(ON)

95 mW @ V_GS= 10 V

R_DS(ON)= 150 mW @ V_GS= 4.5 V

R_DS(ON)= 150 mW @ V_GS= –10 V

R_DS(ON)= 220 mW @ V_GS= –4.5 V

These devices have been designed to offer

exceptional power dissipation in a very small footprint

for applications where the bigger more expensive

SO-8 and TSSOP-8 packages are impractical.

High performance trench technology for extremely

low R_DS(ON)

Applications

SuperSOT –6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick).

DC/DC converter

Load switch

LCD display inverter

Q2(P)

SuperSOT^TM-6

Pin 1

Q1(N)

SuperSOT™-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Units

–30

±25

–2.0

–8

V_GSS

Gate-Source Voltage

±16

2.5

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.96

0.9

P_D

(Note 1c)

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

130

R_qJA

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.333

FDC6333C

7’’

8mm

3000 units

FDC6333C Rev C (W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

中文翻译

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