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FDC6333C_NL

更新时间: 2024-11-09 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
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FDC6333C_NL 数据手册

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October 2001  
FDC6333C  
30V N & P-Channel PowerTrenchÒ MOSFETs  
General Description  
Features  
These N & P-Channel MOSFETs are produced using  
Fairchild Semiconductor’s advanced PowerTrench  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior  
switching performance.  
·
·
Q1 2.5 A, 30V.  
Q2 –2.0 A, 30V.  
Low gate charge  
RDS(ON)  
=
95 mW @ VGS = 10 V  
RDS(ON) = 150 mW @ VGS = 4.5 V  
RDS(ON) = 150 mW @ VGS = –10 V  
RDS(ON) = 220 mW @ VGS = –4.5 V  
These devices have been designed to offer  
exceptional power dissipation in a very small footprint  
for applications where the bigger more expensive  
SO-8 and TSSOP-8 packages are impractical.  
·
·
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
·
SuperSOT –6 package: small footprint (72% smaller than  
SO-8); low profile (1mm thick).  
·
·
·
DC/DC converter  
Load switch  
LCD display inverter  
Q2(P)  
4
5
6
3
2
1
Pin 1  
Q1(N)  
SuperSOT™-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Q1  
30  
Q2  
Units  
–30  
±25  
–2.0  
–8  
V
V
A
VGSS  
Gate-Source Voltage  
±16  
2.5  
8
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
0.96  
0.9  
PD  
W
(Note 1c)  
0.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
130  
60  
RqJA  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.333  
FDC6333C  
7’’  
8mm  
3000 units  
FDC6333C Rev C (W)  
Ó2001 Fairchild Semiconductor Corporation  

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