Datasheet > FDC633N

FDC633N

更新时间： 2024-11-20 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	282K
描述
N-Channel Enhancement Mode Field Effect Transistor

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FDC633N 数据手册

March 1998

FDC633N

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

5.2 A, 30 V. R_DS(ON)= 0.042 W @ V_GS= 4.5 V

This N-Channel enhancement mode power field effect

transistors is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

tailored to minimize on-state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMICA cards, and other

battery powered circuits where fast switching,low in-line

power loss and resistance to transients are needed in a very

small outline surface mount package.

R_DS(ON)= 0.054 W @ V_GS= 2.5 V.

SuperSOT^TM-6 package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SuperSOT^TM-6

SuperSOT^TM-8

SOIC-16

SOT-223

SO-8

SOT-23

SuperSOT^TM-6

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

FDC633N

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

±8

5.2

(Note 1a)

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

P_D

0.8

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

FDC633N Rev.C

12 3 4

中文翻译

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FDC633N 替代型号

型号	品牌	替代类型	描述	数据表
FDC633N_NL	FAIRCHILD	功能相似	Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

与FDC633N相关器件

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