Datasheet > FDC634PL99Z

FDC634PL99Z

更新时间： 2024-11-26 06:40:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	136K
描述
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

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FDC634PL99Z 数据手册

September 2001

FDC634P

P-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

· –3.5 A, –20 V. R_DS(ON)= 80 mW @ V_GS= –4.5 V

R_DS(ON)= 110 mW @ V_GS= –2.5 V

· Low gate charge (7.2 nC typical)

Applications

· High performance trench technology for extremely

low R_DS(ON)

· Battery management

· Load switch

· Battery protection

SuperSOT -6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

–3.5

(Note 1a)

–20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_qJA

°C/W

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.634

FDC634P

7’’

8mm

3000 units

Ó2001 Fairchild Semiconductor Corporation

FDC634P Rev E (W)

12 3 4 5

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