FDC638

更新时间： 2024-09-27 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	241K
描述
P-Channel 2.5V Specified PowerTrenchTM MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDC638 数据手册

June 1999

FDC638P

P-Channel 2.5V Specified PowerTrench^TMMOSFET

General Description

Features

This P -Channel 2.5V specified MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance.

-4.5 A, -20 V. R_DS(ON)= 0.045 W @ V_GS= -4.5 V

R_DS(ON)= 0.065 W @ V_GS= -2.5 V.

Low gate charge (13nC typical).

High performance trench technology for extremely low R_DS(ON)

These devices are well suited for battery power applications: load

switching and power management, battery charging circuits, and

DC/DC conversion.

SuperSOT^TM-6 package: small footprint (72% smaller than standard

SO-8); low profile (1mm thick).

SuperSOT^TM-6

SuperSOT^TM-8

SOT-223

SOIC-16

SOT-23

SO-8

pin 1

SuperSOT ^TM-6

Absolute Maximum Ratings T_A= 25°C unless otherwise note

Symbol Parameter

Ratings

Units

Drain-Source Voltage

-20

±8

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

(Note 1a)

-4.5

-20

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

P_D

0.8

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_{qJ A}

R_{qJ C}

(Note 1)

FDC638P Rev.D

12 3 4 5 6 7...9

中文翻译

下载PDF

与FDC638相关器件

型号	品牌	获取价格	描述	数据表
FDC638APZ	FAIRCHILD	获取价格	P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
FDC638APZ	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，4
FDC638P	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC638P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，4
FDC638P_01	FAIRCHILD	获取价格	P-Channel 2.5V PowerTrench Specified MOSFET
FDC638P_NF073	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDC638P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDC6392S	FAIRCHILD	获取价格	20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDC6392S	ONSEMI	获取价格	-20V集成式P沟道PowerTrench® MOSFET和肖特基二极管
FDC6392S_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal