Datasheet > FDC638P_01

FDC638P_01

更新时间： 2024-01-08 06:31:28

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	156K
描述
P-Channel 2.5V PowerTrench Specified MOSFET

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FDC638P_01 数据手册

September 2001

FDC638P

P-Channel 2.5V PowerTrench^ÒSpecified MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced

· –4.5 A, –20 V.R_DS(ON)= 48 mW @ V_GS= –4.5 V

R_DS(ON)= 65 mW @ V_GS= –2.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance

· Low gate charge (10 nC typical)

These devices are well suited for battery power

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

· High performance trench technology for extremely

low R_DS(ON)

· SuperSOT ™ –6 package: small footprint (72%

smaller than standard SO-8; low profile (1mm thick)

SuperSOT

-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

±8

–4.5

Drain Current – Continuous

– Pulsed

(Note 1a)

–20

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.638

FDC638P

7’’

8mm

3000 units

Ó2001 Fairchild Semiconductor Corporation

FDC638P Rev F1 (W)

12 3 4 5

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