Datasheet > FDC640P

FDC640P

更新时间： 2023-09-03 20:29:56

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	325K
描述
P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，53mΩ

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FDC640P 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾, Specified

MAX

I MAX

DSS

DS(ON)

−20 V

0.053 W @ −4.5 V

0.080 W @ −2.5 V

−4.5 A

2.5 V

FDC640P

General Description

This P−Channel 2.5 V specified MOSFET uses a rugged gate

version of onsemi’s advanced POWERTRENCH process. It has been

optimized for power management applications with a wide range of

gate drive voltage (2.5 V – 12 V).

TSOT23 6−Lead

(SUPERSOTt−6)

CASE 419BL

MARKING DIAGRAM

Features

• −4.5 V, −20 V.

= 0.053 W @ V = −4.5 V

DS(ON)

= 0.080 W @ V = −2.5 V

DS(ON)

640 MG

• Rugged Gate Rating ( 12 V)

• Fast Switching Speed

• High Performance Trench Technology for Extremely Low R

• This is a Pb−Free and Halide Free Device

DS(ON)

640

= Specific Device Code

= Date Code

= Pb−Free Package

Applications

(Note: Microdot may be in either location)

• Battery Management

• Load Switch

• Battery Protection

PIN ASSIGNMENT

ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted

Symbol

Parameter

Drain−Source Voltage

Gate−Source Voltage

Value

−20

Unit

DSS

GSS

Drain Current

−Continuous (Note 1a.)

−4.5

−20

−Pulsed

ORDERING INFORMATION

Maximum Power Dissipation

(Note 1a.)

†

Device

Package

Shipping

1.6

0.8

(Note 1b.)

FDC640P

TSOT−23−6

(SUPERSOTt−6)

(Pb−Free)

3000 /

Tape & Reel

T , T

Operating and Storage Junction

Temperature Range

−55 to

+150

°C

STG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS T = 25°C unless otherwise noted

Symbol

Parameter

Value

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a.)

°C/W

Thermal Resistance,

Junction−to−Case (Note 1)

°C/W

Publication Order Number:

May, 2022 − Rev. 6

FDC640P/D

12 3 4 5 6 7

中文翻译

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FDC640P 替代型号

型号	品牌	替代类型	描述	数据表
FDC604P	ONSEMI	类似代替	P 沟道，PowerTrench® MOSFET，1.8V Specified，-20V，
FDC638P	ONSEMI	类似代替	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，4
FDC602P	ONSEMI	类似代替	P 沟道 PowerTrench® MOSFET，2.5V 指定，-20V，-5.5A，3

与FDC640P相关器件

型号	品牌	获取价格	描述	数据表
FDC640P_01	FAIRCHILD	获取价格	P-Channel 2.5V PowerTrench Specified MOSFET
FDC640P_F095	FAIRCHILD	获取价格	Transistor
FDC640P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDC640P-NBAD004A	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，5
FDC642	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC6420	FAIRCHILD	获取价格	20V N & P-Channel PowerTrench MOSFETs
FDC6420C	FAIRCHILD	获取价格	20V N & P-Channel PowerTrench MOSFETs
FDC6420C	ONSEMI	获取价格	N 和 P 沟道，PowerTrench® MOSFET，20V
FDC6420C_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Si
FDC6420CD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Si

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