Datasheet > FDC645

FDC645

更新时间： 2024-09-29 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	314K
描述
N-Channel PowerTrench MOSFET

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数据手册

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FDC645 数据手册

July 2000

PRELIMINARY

FDC645N

N-Channel PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 5.5 A, 30 V.

R_DS(ON)= 30 mΩ @ V_GS= 4.5 V

R_DS(ON)= 26 mΩ @ V_GS= 10 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• Low gate charge (13 nC typical)

• DC/DC converter

• High power and current handling capability

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

5.5

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.645

FDC645N

7’’

8mm

3000 units

FDC645N Rev B(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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与FDC645相关器件

型号	品牌	获取价格	描述	数据表
FDC645N	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDC645N	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，5.5A，26 mΩ
FDC645N_01	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDC645N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.0055A I(D), 30V, 1-Element, N-Channel, Silicon, Me
FDC645N-F095	FAIRCHILD	获取价格	Transistor
FDC6506	FAIRCHILD	获取价格	Dual P-Channel Logic Level PowerTrench⑩ MOSFE
FDC6506P	FAIRCHILD	获取价格	Dual P-Channel Logic Level PowerTrench⑩ MOSFE
FDC6506P	ONSEMI	获取价格	双 P 沟道 PowerTrench® MOSFET，逻辑电平，-30V，-1.8A，17
FDC6506P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, P-Channel, Silicon, Metal
FDC6506P-NB4S006A	FAIRCHILD	获取价格	Transistor