Datasheet > FDC645N-F095

FDC645N-F095

更新时间： 2024-01-04 21:43:04

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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Transistor

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FDC645N-F095 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDC645N-F095 数据手册

April 2001

FDC645N

N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 5.5 A, 30 V. R_DS(ON)= 30 mΩ @ V_GS= 4.5 V

R_DS(ON)= 26 mΩ @ V_GS= 10 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• Low gate charge (13 nC typical)

• DC/DC converter

• High power and current handling capability

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

5.5

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.645

FDC645N

7’’

8mm

3000 units

FDC645N Rev C(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

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