FDC655BN_NL

更新时间： 2024-01-02 13:01:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	200K
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FDC655BN_NL 数据手册

June 1998

FDC655AN

Single N-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

6.3 A, 30 V. R_DS(ON)= 0.027 W @ V_GS= 10 V

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

R_DS(ON)= 0.035 W @ V_GS= 4.5 V.

Fast switching.

resistance and yet maintain superior switching performance.

Low gate charge ( typical 9 nC).

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and fast

switching are required.

SuperSOT^TM-6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick); pin compatible with

TSOP-6.

SuperSOT^TM-6

SuperSOT^TM-8

SO-8

SOIC-16

SOT-223

SOT-23

SuperSOT^TM-6

Absolute Maximum Ratings T_A= 25°C unless otherwise note

Symbol Parameter

FDC655AN

Units

Drain-Source Voltage

±20

6.3

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Drain Current - Continuous

(Note 1a)

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

P_D

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

FDC655AN Rev.C

12 3 4

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