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FDC699P_NL PDF预览

FDC699P_NL

更新时间: 2024-01-17 11:02:10
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 159K
描述
Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6

FDC699P_NL 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.74
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6JESD-609代码:e4
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified表面贴装:YES
端子面层:NICKEL PALLADIUM GOLD端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC699P_NL 数据手册

 浏览型号FDC699P_NL的Datasheet PDF文件第2页浏览型号FDC699P_NL的Datasheet PDF文件第3页浏览型号FDC699P_NL的Datasheet PDF文件第4页浏览型号FDC699P_NL的Datasheet PDF文件第5页浏览型号FDC699P_NL的Datasheet PDF文件第6页 
January 2004  
FDC699P  
P-Channel 2.5V PowerTrench MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 12V).  
–7 A, –20 V  
RDS(ON) = 22 m@ VGS = –4.5 V  
RDS(ON) = 30 m@ VGS = –2.5 V  
High performance trench technology for extremely  
low RDS(ON)  
Fast switching speed  
Applications  
FLMP SuperSOT-6 package: Enhanced thermal  
performance in industry-standard package size  
Battery management  
Load Switch  
Battery protection  
G
6
4
1
2
3
S
S
5
S
S
Bottom Drain  
S
SuperSOT-6TM FLMP  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–20  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±12  
–7  
–40  
(Note 1a)  
Power Dissipation  
(Note 1a)  
(Note 1b)  
2
1.5  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
60  
111  
0.5  
RθJA  
°C/W  
Thermal Resistance, Junction-to-Case  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.699  
FDC699P  
7’’  
8mm  
3000 units  
FDC699P Rev C2 (W)  
2004 Fairchild Semiconductor Corporation  

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