是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP40,.6 | Reach Compliance Code: | unknown |
风险等级: | 5.86 | JESD-30 代码: | R-PDIP-T40 |
JESD-609代码: | e0 | 端子数量: | 40 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP40,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | 5 V |
认证状态: | Not Qualified | 子类别: | Secondary Storage Controllers |
最大压摆率: | 150 mA | 标称供电电压: | 5 V |
表面贴装: | NO | 技术: | MOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC765AP | ETC |
获取价格 |
Floppy Disk Controller |
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FDC796N | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET |
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FDC796N_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, M |
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FDC796N-F077 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDC796N-G | FAIRCHILD |
获取价格 |
Transistor |
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FDC855N | FAIRCHILD |
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Single N-Channel, Logic Level, PowerTrench㈢ M |
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FDC855N | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,逻辑电平,30V,6.1A,27 mΩ |
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FDC8601 | FAIRCHILD |
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N-Channel Shielded Gate PowerTrench® MOSFET |
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FDC8601 | ONSEMI |
获取价格 |
N 沟道屏蔽门极 Power Trench® MOSFET,100 V,2.7 A,109 |
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FDC8602 | FAIRCHILD |
获取价格 |
Dual N-Channel PowerTrench® MOSFET 100 V, 1. |
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