Datasheet > FDC796N-G

FDC796N-G

更新时间： 2024-01-08 13:06:30

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	185K
描述
Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDC796N-G 数据手册

February 2004

FDC796N



30V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 12.5 A, 30 V.

R_DS(ON)

9 mΩ @ V_GS= 10 V

R_DS(ON)= 12 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• Low gate charge

• DC/DC converter

• Power management

• Load switch

• High power and current handling capability

• Fast switching speed.

Bottom Drain

SuperSOT-6^TMFLMP

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

± 20

12.5

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.1

−55 to +150

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

111

0.5

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.796

FDC796N

7’’

8mm

3000 units

FDC796N Rev D (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6

中文翻译

下载PDF

与FDC796N-G相关器件

型号	品牌	获取价格	描述	数据表
FDC855N	FAIRCHILD	获取价格	Single N-Channel, Logic Level, PowerTrench㈢ M
FDC855N	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，逻辑电平，30V，6.1A，27 mΩ
FDC8601	FAIRCHILD	获取价格	N-Channel Shielded Gate PowerTrenchÂ® MOSFET
FDC8601	ONSEMI	获取价格	N 沟道屏蔽门极 Power Trench® MOSFET，100 V，2.7 A，109
FDC8602	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET 100 V, 1.
FDC8602	ONSEMI	获取价格	双 N 沟道屏蔽门极 PowerTrench® MOSFET，100 V，1.2 A，35
FDC86244	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 150 V, 2.3 A,
FDC86244	ONSEMI	获取价格	N 沟道，屏蔽门极，Power Trench® MOSFET，150 V，2.3 A，14
FDC86244	KEXIN	获取价格	N-Channel MOSFET
FDC86244 (KDC86244)	KEXIN	获取价格	N-Channel MOSFET