FDC658P

更新时间： 2024-11-24 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关光电二极管
页数	文件大小	规格书
8页	250K
描述
Single P-Channel, Logic Level, PowerTrenchTM MOSFET

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中文翻译

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数据手册
替代型号

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FDC658P 数据手册

February 1999

FDC658P

Single P-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

-4 A, -30 V. R_DS(ON)= 0.050 W @ V_GS= -10 V

R_DS(ON)= 0.075 W @ V_GS= -4.5 V.

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

Low gate charge (8nC typical).

High performance trench technology for extremely low

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

R_DS(ON)

SuperSOT^TM-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

SuperSOT^TM-6

SOT-223

SOIC-16

SuperSOT^TM-8

SO-8

SOT-23

pin 1

SuperSOT^TM-6

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise note

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

-30

Gate-Source Voltage - Continuous

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

-4

-20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDC658P Rev.C

12 3 4 5 6 7 8

中文翻译

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FDC658P 替代型号

型号	品牌	替代类型	描述	数据表
FDC654P	FAIRCHILD	类似代替	P-Channel Enhancement Mode Field Effect Transistor
FDC638P	FAIRCHILD	类似代替	P-Channel 2.5V Specified PowerTrenchTM MOSFET
ZXMP3A17E6TA	DIODES	功能相似	30V P-CHANNEL ENHANCEMENT MODE MOSFET

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