Datasheet > FDC658P-NB4E009A

FDC658P-NB4E009A

更新时间： 2024-02-09 19:40:40

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	106K
描述
Transistor

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技术参数
数据手册

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FDC658P-NB4E009A 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.6 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

FDC658P-NB4E009A 数据手册

February 1999

FDC658P

Single P-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

-4 A, -30 V. R_DS(ON)= 0.050 W @ V_GS= -10 V

R_DS(ON)= 0.075 W @ V_GS= -4.5 V.

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

Low gate charge (8nC typical).

High performance trench technology for extremely low

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

R_DS(ON)

SuperSOT^TM-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

SuperSOT^TM-6

SOT-223

SOIC-16

SuperSOT^TM-8

SO-8

SOT-23

pin 1

SuperSOT^TM-6

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise note

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

-30

Gate-Source Voltage - Continuous

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

-4

-20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDC658P Rev.C

12 3 4 5

中文翻译

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