Datasheet > FDC697P-G

FDC697P-G

更新时间： 2024-09-27 21:09:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	159K
描述
Transistor

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技术参数
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FDC697P-G 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDC697P-G 数据手册

January 2004

FDC697P



P-Channel 1.8V PowerTrench MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage Power Trench

process. It has been optimized for battery power

management applications.

• –8 A, –20 V

R_DS(ON)= 20 mΩ @ V_GS= –4.5 V

R_DS(ON)= 25 mΩ @ V_GS= –2.5 V

R_DS(ON)= 35 mΩ @ V_GS= –1.8 V

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Fast switching speed

•

Battery management

Load Switch

• FLMP SuperSOT-6 package: Enhanced thermal

performance in industry-standard package size

Battery protection

Bottom

Drain

SuperSOT-6^TMFLMP

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

–8

–40

(Note 1a)

Power Dissipation

(Note 1a)

(Note 1b)

1.5

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

111

0.5

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.697

FDC697P

7’’

8mm

3000 units

FDC697P Rev C2 (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6

中文翻译

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