5秒后页面跳转
FDC697P_F077 PDF预览

FDC697P_F077

更新时间: 2024-02-08 06:03:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 156K
描述
Power Field-Effect Transistor, 8A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6

FDC697P_F077 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.33
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e4元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC697P_F077 数据手册

 浏览型号FDC697P_F077的Datasheet PDF文件第2页浏览型号FDC697P_F077的Datasheet PDF文件第3页浏览型号FDC697P_F077的Datasheet PDF文件第4页浏览型号FDC697P_F077的Datasheet PDF文件第5页浏览型号FDC697P_F077的Datasheet PDF文件第6页 
January 2004  
FDC697P  
P-Channel 1.8V PowerTrench MOSFET  
General Description  
Features  
This P-Channel 1.8V specified MOSFET uses  
Fairchild’s advanced low voltage Power Trench  
process. It has been optimized for battery power  
management applications.  
–8 A, –20 V  
RDS(ON) = 20 m@ VGS = –4.5 V  
RDS(ON) = 25 m@ VGS = –2.5 V  
RDS(ON) = 35 m@ VGS = –1.8 V  
High performance trench technology for extremely  
Applications  
low RDS(ON)  
Fast switching speed  
Battery management  
Load Switch  
FLMP SuperSOT-6 package: Enhanced thermal  
performance in industry-standard package size  
Battery protection  
G
6
5
4
1
2
3
S
S
S
S
Bottom  
Drain  
S
SuperSOT-6TM FLMP  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–20  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±8  
–8  
–40  
(Note 1a)  
Power Dissipation  
(Note 1a)  
(Note 1b)  
2
1.5  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
60  
111  
0.5  
RθJA  
°C/W  
Thermal Resistance, Junction-to-Case  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.697  
FDC697P  
7’’  
8mm  
3000 units  
FDC697P Rev C2 (W)  
2004 Fairchild Semiconductor Corporation  

FDC697P_F077 替代型号

型号 品牌 替代类型 描述 数据表
FDC697P FAIRCHILD

类似代替

P-Channel 1.8V PowerTrench MOSFET

与FDC697P_F077相关器件

型号 品牌 获取价格 描述 数据表
FDC697P-G FAIRCHILD

获取价格

Transistor
FDC699P FAIRCHILD

获取价格

P-Channel 2.5V PowerTrencH MOSFET
FDC699P_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Meta
FDC-6X PREMO

获取价格

IEC Connector Filter
FDC-6Z PREMO

获取价格

IEC Connector Filter
FDC7265-2LJP ETC

获取价格

Peripheral IC
FDC7265-2P ETC

获取价格

Peripheral IC
FDC7265CD ETC

获取价格

Peripheral IC
FDC7265P ETC

获取价格

Floppy Disk Controller
FDC72C65CD ETC

获取价格

Floppy Disk Controller