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FDC658AP PDF预览

FDC658AP

更新时间: 2024-11-26 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 322K
描述
单 P 沟道,逻辑电平,PowerTrench® MOSFET,-30V,-4A,50mΩ

FDC658AP 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.95
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:166990Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SSOT 6LSamacsys Released Date:2015-04-13 16:42:55
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (ID):4 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):90 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL功耗环境最大值:1.6 W
最大功率耗散 (Abs):1.6 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDC658AP 数据手册

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DATA SHEET  
www.onsemi.com  
+
MOSFET – Single, P-Channel,  
POWERTRENCH), Logic Level  
1
TSOT23  
CASE 419BL  
-30 V, -4 A, 50 mW  
FDC658AP, FDC658AP-G  
D
D
G
1
2
3
6
5
4
D
D
S
General Description  
This PChannel Logic Level MOSFET is produced using onsemi  
advanced POWERTRENCH process. It has been optimized for battery  
power management applications.  
Features  
Max R  
Max R  
= 50 mW @ V = 10 V, I = 4 A  
GS D  
DS(on)  
MARKING DIAGRAM  
= 75 mW @ V = 4.5 V, I = 3.4 A  
DS(on)  
GS  
D
Low Gate Charge  
.58A MG  
High Performance Trench Technology for Extremely Low R  
PbFree, Halide Free and RoHS Compliant  
DS(on)  
G
1
Applications  
.58A = Specific Device Code  
Battery Management  
Load Switch  
Battery Protection  
DCDC Conversion  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
ABSOLUTE MAXIMUM RATINGS  
A
Device  
Package  
Shipping  
T = 25°C unless otherwise noted.  
FDC658AP  
TSOT23  
(PbFree/  
Halide Free)  
3000 /  
Symbol  
Parameter  
Ratings  
30  
Unit  
V
Tape & Reel  
V
DS  
V
GS  
DrainSource Voltage  
GateSource Voltage  
FDC658APG  
TSOT23  
(PbFree/  
Halide Free)  
3000 /  
25  
V
Tape & Reel  
I
D
Drain Current  
Continuous (Note 1a)  
Pulsed  
A
4  
20  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
P
D
Maximum Power dissipation (Note 1a)  
(Note 1b)  
1.6  
0.8  
W
T , T  
Operating and Storage Junction  
Temperature Range  
55 to +150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Ratings  
Unit  
R
Thermal Resistance,  
JunctiontoAmbient (Note 1a)  
78  
°C/W  
q
JA  
R
Thermal Resistance,  
JunctiontoCase (Note 1)  
30  
°C/W  
q
JC  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
February, 2022 Rev. 3  
FDC658AP/D  

FDC658AP 替代型号

型号 品牌 替代类型 描述 数据表
FDC637BNZ ONSEMI

类似代替

N 沟道 PowerTrench® MOSFET,2.5V 指定,20V,6.2A,24m
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P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-3.5A,8
NTUD3169CZT5G ONSEMI

功能相似

Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−96

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