是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.66 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 166987 | Samacsys Pin Count: | 6 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (6-Pin) |
Samacsys Footprint Name: | SSOT 6L | Samacsys Released Date: | 2015-04-13 16:42:54 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 3.5 A |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDC637BNZ | ONSEMI |
类似代替 |
N 沟道 PowerTrench® MOSFET,2.5V 指定,20V,6.2A,24m | |
FDC658AP | ONSEMI |
类似代替 |
单 P 沟道,逻辑电平,PowerTrench® MOSFET,-30V,-4A,50mΩ | |
FDC655BN | ONSEMI |
类似代替 |
N 沟道,PowerTrench® MOSFET,逻辑电平,30 V,6.3 A,25 m |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC634P_01 | FAIRCHILD |
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P-Channel 2.5V Specified PowerTrench MOSFET | |
FDC634P_NF073 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC634P_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC634PD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC634PD87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC634P-F095 | FAIRCHILD |
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Transistor | |
FDC634P-G | FAIRCHILD |
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暂无描述 | |
FDC634PL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC634PS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC636P | FAIRCHILD |
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P-Channel Logic Level Enhancement Mode Field Effect Transistor |