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FDC638APZ PDF预览

FDC638APZ

更新时间: 2024-11-26 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI PC脉冲光电二极管晶体管
页数 文件大小 规格书
6页 588K
描述
P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-4.5A,43mΩ

FDC638APZ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:13 weeks风险等级:0.94
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:438551Samacsys Pin Count:6
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SuperSOT-6Samacsys Released Date:2017-06-06 09:02:05
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):4.5 A
最大漏极电流 (ID):4.5 A最大漏源导通电阻:72 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

FDC638APZ 数据手册

 浏览型号FDC638APZ的Datasheet PDF文件第2页浏览型号FDC638APZ的Datasheet PDF文件第3页浏览型号FDC638APZ的Datasheet PDF文件第4页浏览型号FDC638APZ的Datasheet PDF文件第5页浏览型号FDC638APZ的Datasheet PDF文件第6页 
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