是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.95 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 5354 | Samacsys Pin Count: | 6 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (6-Pin) |
Samacsys Footprint Name: | SSOT 6L | Samacsys Released Date: | 2015-04-16 09:48:08 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 4.5 A |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 0.048 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.6 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDC604P | ONSEMI |
类似代替 |
P 沟道,PowerTrench® MOSFET,1.8V Specified,-20V, | |
FDC640P | ONSEMI |
类似代替 |
P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-4.5A,5 | |
FDC602P | ONSEMI |
类似代替 |
P 沟道 PowerTrench® MOSFET,2.5V 指定,-20V,-5.5A,3 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC638P_01 | FAIRCHILD |
获取价格 |
P-Channel 2.5V PowerTrench Specified MOSFET | |
FDC638P_NF073 | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC638P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC6392S | FAIRCHILD |
获取价格 |
20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
FDC6392S | ONSEMI |
获取价格 |
-20V集成式P沟道PowerTrench® MOSFET和肖特基二极管 | |
FDC6392S_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC6392SS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDC6401N | FAIRCHILD |
获取价格 |
Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
FDC6401N | ONSEMI |
获取价格 |
双 N 沟道,PowerTrench® MOSFET,2.5V 指定,20V,3.0A,7 | |
FDC6401N_NBHS003 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |