Datasheet > FDC6420CS62Z

FDC6420CS62Z

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	102K
描述
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

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FDC6420CS62Z 数据手册

September 2001

FDC6420C

20V N & P-Channel PowerTrench^ÒMOSFETs

General Description

Features

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

Q1 3.0 A, 20V. R_DS(ON)= 70 mW @ V_GS= 4.5 V

R_DS(ON)= 95 mW @ V_GS= 2.5 V

Q2 –2.2 A, 20V. R_DS(ON)= 125 mW @ V_GS= –4.5 V

R_DS(ON)= 190 mW @ V_GS= –2.5 V

These devices have been designed to offer

exceptional power dissipation in a very small footprint

for applications where the bigger more expensive

SO-8 and TSSOP-8 packages are impractical.

Low gate charge

High performance trench technology for extremely

low R_DS(ON)

Applications

SuperSOT –6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick).

DC/DC converter

Load switch

LCD display inverter

Q2(P)

SuperSOT^TM-6

Pin 1

Q1(N)

SuperSOT™-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Units

–20

±12

–2.2

–6

V_GSS

Gate-Source Voltage

±12

3.0

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.96

0.9

P_D

(Note 1c)

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

130

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.420

FDC6420C

7’’

8mm

3000 units

FDC6420C Rev C(W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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