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FDC642P_NL

更新时间: 2024-01-02 10:01:57
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 122K
描述
Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6

FDC642P_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:ROHS COMPLIANT, SUPERSOT-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.44
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):145 pFJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC642P_NL 数据手册

 浏览型号FDC642P_NL的Datasheet PDF文件第2页浏览型号FDC642P_NL的Datasheet PDF文件第3页浏览型号FDC642P_NL的Datasheet PDF文件第4页浏览型号FDC642P_NL的Datasheet PDF文件第5页 
July 1999  
FDC642P  
P-Channel 2.5V Specified PowerTrenchTM MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is produced  
using Fairchild's advanced PowerTrench process that  
has been especially tailored to minimize on-state  
resistance and yet maintain low gate charge for  
superior switching performance.  
• -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V  
RDS(ON) = 0.100 @ VGS = -2.5 V  
• Fast switching speed.  
• Low gate charge (7.2nC typical).  
These devices have been designed to offer exceptional  
power dissipation in a very small footprint for  
applications where the larger packages are impractical.  
• High performance trench technology for extremely  
low RDS(ON)  
.
• SuperSOTTM-6 package: small footprint (72% smaller  
Applications  
•
Load switch  
than standard SO-8); low profile (1mm thick).  
• Battery protection  
• Power management  
S
1
6
5
4
D
D
2
3
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
V
V
A
±8  
Drain Current - Continuous  
Drain Current - Pulsed  
(Note 1)  
-4  
-20  
(Note 1a)  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.6  
W
0.8  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
°C/W  
°C/W  
RθJC  
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
.642  
FDC642P  
7’’  
8mm  
3000 units  
1999 Fairchild Semiconductor Corporation  
FDC642P, Rev. B  

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