生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.6 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC6432SH | FAIRCHILD |
获取价格 |
12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
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FDC645 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET |
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FDC645N | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET |
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FDC645N | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,30V,5.5A,26 mΩ |
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FDC645N_01 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET |
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FDC645N_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.0055A I(D), 30V, 1-Element, N-Channel, Silicon, Me |
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FDC645N-F095 | FAIRCHILD |
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Transistor |
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FDC6506 | FAIRCHILD |
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Dual P-Channel Logic Level PowerTrench⑩ MOSFE |
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FDC6506P | FAIRCHILD |
获取价格 |
Dual P-Channel Logic Level PowerTrench⑩ MOSFE |
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FDC6506P | ONSEMI |
获取价格 |
双 P 沟道 PowerTrench® MOSFET,逻辑电平,-30V,-1.8A,17 |
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