5秒后页面跳转
FDC642P_09 PDF预览

FDC642P_09

更新时间: 2024-09-30 12:23:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 263K
描述
P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ

FDC642P_09 数据手册

 浏览型号FDC642P_09的Datasheet PDF文件第2页浏览型号FDC642P_09的Datasheet PDF文件第3页浏览型号FDC642P_09的Datasheet PDF文件第4页浏览型号FDC642P_09的Datasheet PDF文件第5页浏览型号FDC642P_09的Datasheet PDF文件第6页浏览型号FDC642P_09的Datasheet PDF文件第7页 
June 2009  
FDC642P_F085  
®
P-Channel PowerTrench MOSFET  
-20V, -4A, 100mΩ  
Applications  
„ Load switch  
Features  
„ Typ rDS(on) = 52.5mat VGS = -4.5V, ID = -4A  
„ Typ rDS(on) = 75.3mat VGS = -2.5V, ID = -3.2A  
„ Fast switching speed  
„ Battery protection  
„ Power management  
„ Low gate charge(6.9nC typical)  
„ High performance trench technology for extremely low  
rDS(on)  
„ SuperSOTTM-6 package:small footprint(72% smaller  
than standard SO-8);low profile(1mm thick).  
„ RoHS Compliant  
„ Qualified to AEC Q101  
S
G
S
4
3
D
D
D
D
5
2
G
D
D
D
6
1
SuperSOT TM-6  
D
©2009 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FDC642P_F085 Rev. A  

与FDC642P_09相关器件

型号 品牌 获取价格 描述 数据表
FDC642P_F085 FAIRCHILD

获取价格

FDC642P P-Channel 2.5V specified PowerTrench MOSFET
FDC642P_NF073 FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDC642P_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDC642P-F085 ONSEMI

获取价格

P 沟道,PowerTrench® MOSFET,-20V,-4A,100mΩ
FDC642P-F085P ONSEMI

获取价格

P 沟道,PowerTrench® MOSFET,-20V,-4A,100mΩ
FDC642P-F095 FAIRCHILD

获取价格

Transistor
FDC6432SH FAIRCHILD

获取价格

12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
FDC645 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDC645N FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDC645N ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,5.5A,26 mΩ