Datasheet > FDC6401N_NBHS003

FDC6401N_NBHS003

更新时间： 2023-02-26 14:27:21

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	76K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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FDC6401N_NBHS003 数据手册

October 2001

FDC6401N

Dual N-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This Dual N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

3.0 A, 20 V.

R_DS(ON)= 70 mW @ V_GS= 4.5 V

R_DS(ON)= 95 mW @ V_GS= 2.5 V

Low gate charge (3.3 nC)

High performance trench technology for extremely

low R_DS(ON)

Applications

DC/DC converter

Battery Protection

Power Management

High power and current handling capability

SuperSOT^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

3.0

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.96

P_D

0.9

(Note 1c)

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

130

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.401

FDC6401N

7’’

8mm

3000 units

FDC6401N Rev C (W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5

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