FDC642

更新时间： 2024-11-24 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	270K
描述
P-Channel 2.5V Specified PowerTrench⑩MOSFET

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数据手册

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FDC642 数据手册

July 1999

FDC642P

P-Channel 2.5V Specified PowerTrench^TMMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced

using Fairchild's advanced PowerTrench process that

has been especially tailored to minimize on-state

resistance and yet maintain low gate charge for

superior switching performance.

-4 A, -20 V. R_DS(ON)= 0.065 Ω @ V_GS= -4.5 V

R_DS(ON)= 0.100 Ω @ V_GS= -2.5 V

Fast switching speed.

Low gate charge (7.2nC typical).

These devices have been designed to offer exceptional

power dissipation in a very small footprint for

applications where the larger packages are impractical.

High performance trench technology for extremely

low R_DS(ON)

SuperSOT^TM-6 package: small footprint (72% smaller

Applications

Load switch

than standard SO-8); low profile (1mm thick).

Battery protection

Power management

SuperSOT ^TM-6

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-20

±8

Drain Current - Continuous

Drain Current - Pulsed

(Note 1)

-4

-20

(Note 1a)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θ_JA

°C/W

R_θ_JC

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

.642

FDC642P

7’’

8mm

3000 units

1999 Fairchild Semiconductor Corporation

FDC642P, Rev. B

12 3 4 5 6 7 8

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