Datasheet > FDC637AN

FDC637AN

更新时间： 2024-11-22 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关光电二极管晶体管
页数	文件大小	规格书
6页	333K
描述
N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FDC637AN 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	10 weeks	风险等级：	0.98
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	985863	Samacsys Pin Count：	6
Samacsys Part Category：	MOSFET (N-Channel)	Samacsys Package Category：	Small Outline Packages
Samacsys Footprint Name：	FDC637AN	Samacsys Released Date：	2019-02-28 15:01:03
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	6.2 A
最大漏极电流 (ID)：	6.2 A	最大漏源导通电阻：	0.024 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	6
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.6 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDC637AN 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

12 3 4 5 6

中文翻译

下载PDF

与FDC637AN相关器件

型号	品牌	获取价格	描述	数据表
FDC637AN_NF073	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637AN_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637AND84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637AND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637ANL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637AN-NB5E023A	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24m
FDC637ANS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDC637BNZ	FAIRCHILD	获取价格	N-Channel 2.5V Specified PowerTrench㈢ MOSFET
FDC637BNZ	ROCHESTER	获取价格	6200mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-6, 6 PIN
FDC637BNZ	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24m

与FDC637AN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

FDC637AN

FDC637AN 技术参数

FDC637AN 数据手册

与FDC637AN相关器件

与FDC637AN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDC637AN

FDC637AN 技术参数

FDC637AN 数据手册

与FDC637AN相关器件

与FDC637AN相关文章

您还可以找

您在本页遇到什么问题？