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FDC6332L PDF预览

FDC6332L

更新时间: 2024-11-20 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数 文件大小 规格书
4页 150K
描述
Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET

FDC6332L 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPER SOT-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.71Is Samacsys:N
内置保护:TRANSIENT接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
长度:2.92 mm湿度敏感等级:1
功能数量:1端子数量:6
输出电流流向:SOURCE标称输出峰值电流:1 A
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.22 mm最大供电电压:8 V
最小供电电压:1.8 V标称供电电压:2.5 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mmBase Number Matches:1

FDC6332L 数据手册

 浏览型号FDC6332L的Datasheet PDF文件第2页浏览型号FDC6332L的Datasheet PDF文件第3页浏览型号FDC6332L的Datasheet PDF文件第4页 
June 2003  
FDC6332L  
Common Source Load Switch  
P-Channel 1.8V Specified PowerTrench MOSFET  
General Description  
Features  
This Load Switch integrates an N-Channel Power  
MOSFET that drives Common-Source P-Channels and  
in a small SuperSotTM–6 package. It uses Fairchild’s  
advanced low voltage PowerTrench process. The  
RDS(ON) is 750 mper the switch @ VGS 1.8Vand is  
optimized for battery power management applications.  
–1 A, 8 V. RDS(ON) = 350 m@ VGS = –4.5 V  
RDS(ON) = 500 m@ VGS = –2.5 V  
RDS(ON) = 750 m@ VGS = –1.8 V  
N-Channel MOSFET includes Zener protection for  
ESD ruggedness (>6KV Human body model)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
Battery management/Charger Application  
Accessory load switching  
Vin  
S1/S2  
1
2
3
6
5
4
V
DROP  
IN  
OUT  
On/Off  
G1/G2  
Vout  
GND  
Pin 1  
ON/OFF  
Equivalent Circuit  
SuperSOT™-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VIN  
Input Voltage  
V
V
A
±8  
8
VON  
Turn-On Voltage  
ILoad  
Load Current – Continuous  
– Pulsed  
Maximum Power Dissipation  
(Note 1)  
(Note 1)  
–1.0  
–2.0  
0.7  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1)  
160  
90  
RθJA  
RθJC  
°C/W  
Package Marking and Ordering Information  
Device  
Reel Size  
Tape width  
Quantity  
.332  
FDC6332L  
7’’  
8mm  
3000 units  
FDC6332L Rev D(W)  
2003Fairchild Semiconductor Corporation  

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