Datasheet > FDC6327C-F169

FDC6327C-F169

更新时间： 2024-11-22 11:11:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	357K
描述
双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定

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FDC6327C-F169 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84

FDC6327C-F169 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual,

N & P-Channel,

POWERTRENCH⁾

MAX

DSS

DS(ON)

20 V

0.08 W @ 4.5 V

0.12 W @ 2.5 V

2.7 A

DSS

MAX

I MAX

2.5 V Specified

DS(ON)

−20 V

0.17 W @ −4.5 V

0.25 W @ −2.5 V

−1.6 A

FDC6327C

General Description

These N & P−Channel 2.5 V specified MOSFETs are produced

using onsemi’s advanced POWERTRENCH process that has been

especially tailored to minimize on−state resistance and yet maintain

low gate charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where the bigger

more expensive SO−8 and TSSOP−8 packages are impractical.

TSOT23 6−Lead

SUPERSOTt−6

CASE 419BL

Features

• N−Channel 2.7 A, 20 V

MARKING DIAGRAM

= 0.08 W @ V = 4.5 V

DS(ON)

= 0.12 W @ V = 2.5 V

DS(ON)

• P−Channel −1.6 A, −20 V

327 MG

= 0.17 W @ V = −4.5 V

DS(ON)

= 0.25 W @ V = −2.5 V

DS(ON)

• Fast Switching Speed

327 = Specific Device Code

• Low Gate Charge

= Assembly Operation Month

= Pb−Free Package

• High Performance Trench Technology for Extremely Low R

DS(ON)

• SUPERSOTt−6 Package: Small Footprint (72% Smaller than

(Note: Microdot may be in either location)

SO−8); Low Profile (1 mm Thick)

• This is a Pb−Free Device

PINOUT

Applications

• DC/DC Converter

• Load Switch

• Motor Driving

ORDERING INFORMATION

†

Device

FDC6327C

Package

Shipping

3000 /

Tape & Reel

TSOT−23−6

(Pb−free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

February, 2022 − Rev. 6

FDC6327C/D

12 3 4 5 6 7...10

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