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FDC6327 PDF预览

FDC6327

更新时间: 2024-11-20 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
12页 323K
描述
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6327 数据手册

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July 2000  
FDC6327C  
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET  
Features  
General Description  
These N & P-Channel 2.5V specified MOSFETs are  
produced using Fairchild Semiconductor's advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain low gate  
charge for superior switching performance.  
N-Channel 2.7A, 20V. RDS(on) = 0.08@ VGS = 4.5V  
RDS(on) = 0.12@ VGS = 2.5V  
P-Channel -1.6A, -20V.RDS(on) = 0.17@ VGS = -4.5V  
RDS(on)= 0.25@ VGS = -2.5V  
Fast switching speed.  
These devices have been designed to offer exceptional power  
dissipation in a very small footprint for applications where  
the bigger more expensive SO-8 and TSSOP-8 packages  
are impractical.  
Low gate charge.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
DC/DC converter  
Load switch  
SuperSOTTM-6 package: small footprint (72% smaller  
than SO-8); low profile (1mm thick).  
Motor driving  
D2  
S1  
3
2
1
4
5
6
D1  
G2  
S2  
SuperSOTTM -6  
G1  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
N-Channel  
P-Channel  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
20  
-20  
V
V
A
VGSS  
8
8
±
±
(Note 1a)  
ID  
2.7  
8
-1.9  
-8  
(Note 1a)  
(Note 1b)  
PD  
Power Dissipation  
0.96  
0.9  
W
(Note 1c)  
0.7  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
(Note 1a)  
(Note 1)  
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
130  
60  
C/W  
C/W  
θJA  
θJC  
°
°
R
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
.327  
FDC6327C  
7”  
8mm  
3000  
1999 Fairchild Semiconductor Corporation  
FDC6327C, Rev. E  

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