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FDC6321C PDF预览

FDC6321C

更新时间: 2024-11-10 11:15:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 332K
描述
双 N 和 P 沟道,数字 FET,25V

FDC6321C 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SUPERSOT-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:1.07
Samacsys Description:N-P channel digital MOSFET,FDC6321C 0.9W配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:25 V最大漏极电流 (ID):0.00068 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):9 pFJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDC6321C 数据手册

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DATA SHEET  
www.onsemi.com  
Dual, N & P-Channel,  
Digital FET  
NChannel  
MAX  
V
DSS  
R
I MAX  
D
DS(ON)  
25 V  
0.45 W @ 4.5 V  
PChannel  
0.68 A  
FDC6321C  
General Description  
These dual N & P Channel logic level enhancement mode field  
effect transistors are produced using onsemi’s proprietary, high cell  
density, DMOS technology. This very high density process is  
especially tailored to minimize onstate resistance. This device has  
been designed especially for low voltage applications as a replacement  
for digital transistors in load switching applications. Since bias  
resistors are not required this dual digital FET can replace several  
digital transistors with different bias resistors.  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
25 V  
1.1 W @ 4.5 V  
0.46 A  
D2  
S1  
D1  
G2  
S2  
G1  
Features  
TSOT23 6Lead  
SUPERSOTt6  
CASE 419BL  
NChannel 0.68 A, 25 V  
R
= 0.45 W @ V = 4.5 V  
GS  
DS(ON)  
PChannel 0.46 A, 25 V  
= 1.1 W @ V = 4.5 V  
R
DS(ON)  
GS  
MARKING DIAGRAM  
Very Low Level Gate Drive Requirements Allowing Direct  
Operation in 3 V Circuits. V < 1.0 V.  
GS(th)  
GateSource Zener for ESD Ruggedness. >6 kV Human Body Model  
Replace Multiple Dual NPN & PNP Digital Transistors  
This is a PbFree Device  
321 MG  
G
1
321 = Specific Device Code  
M
G
= Assembly Operation Month  
= PbFree Package  
(Note: Microdot may be in either location)  
PINOUT  
4
5
6
3
2
1
ORDERING INFORMATION  
Device  
FDC6321C  
Package  
Shipping  
3000 /  
Tape & Reel  
TSOT236  
(Pbfree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2022 Rev. 3  
FDC6321C/D  

FDC6321C 替代型号

型号 品牌 替代类型 描述 数据表
FDC6333C ONSEMI

类似代替

N 和 P 沟道,PowerTrench® MOSFET,30V
FDC6327C ONSEMI

类似代替

双 N 和 P 沟道,PowerTrench® MOSFET,2.5V 指定

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